POINT DEFECT - DISLOCATION INTERACTION IN MgO

POINT DEFECT - DISLOCATION INTERACTION IN MgO

Amsl i tude Dependent Internal Friction has been measured from 77 K to 593 K in FlgO single crystals p las t ica l ly deformed a t room tenperature . Experiiioental resul ts have been tested w i t h several theoretical nodels of dislocation breakaway. A re1 iable value of interaction energy (0.5 eV) i s deduced fro111 the aodel of Teutonico, Granato and LGcke, b u t only a part ial agreement be...

STUDY OF DISLOCATION - POINT DEFECTS INTERACTION IN MgO SINGLE CRYSTALS BY INTERNAL FRICTION

Dislocation mechanism of interface point defect migration

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Point defect interaction with dislocations in silicon

We investigated the interaction of intrinsic point defects (vacancies and self-interstitials) with a partial dislocation in silicon. Using a combination of zero-temperature ab initio total energy calculations with finite temperature free-energy calculations based on an interatomic potential, we obtained energies for the relevant core defects. The formation energies of vacancies and interstitial...

The Kink Picture of Dislocation Mobility and Dislocation-point-defect Interactions

The paper gives a coherent account of the theory of d i s loca t ion mobil i ty i n terms of kink-pair formation and kink migration. Three leve l s of descr ip t ion a r i s e i n a n a t u r a l way, namely those of the motion of s t r a i g h t d i s loca t ions , of kink-pair formation on d i s loca t ions , and of kink migration. The i n t e r r e l a t i o n s h i p s between these leve l ...